Crystal growth of compound semiconductor

Abstract

Abstract PURPOSE:To obtain zincblende group III-V compound-semiconductor single crystal with flat crystal surface even if doped with >=10<19>cm<-3> of Mg element by regulating the slope of a substrate under specified conditions. CONSTITUTION:In the crystal growth of Mg element-doped zincblende group III-V compound-semiconductor single crystal by organometal vapor growth process, a substrate having the same crystal structure as that of said semiconductor is put to crystal growth in a tilted state at a degree of >=0.5 from (100)plane to the adjacent (111)A or (111)B plane. Said compound semiconductor suitable for the above crystal growth is.e.g. of GaAs, AlGaAs, InP, GaInAs.

Inventors

• 👤 Mitsuru Shimazu
• 👤 充 嶋津
• 👤 Hiroya Kimura
• 👤 浩也 木村

Bibliographic Details