Semiconductor device

Abstract

Abstract PURPOSE:To ensure the allowable current value sufficiently by bringing a metallic wiring layer formed into a semiconductor substrate into contact with a metallic layer formed onto the semiconductor substrate through a contact hole. CONSTITUTION:The rears of P-type substrates 10, 11 are etched and treated to form variable metallic thin-films 12, 13, and a metallic wiring layer 14 is formed on the surface of the thin-film 13. The substrates are laminated, the whole chip is etched so as to be equalized to the length of a wafer, a polycrystalline silicon gate electrode 15 and a gate oxide film 16 are shaped on the substrate 10, and a source region 17, a drain region 18 and substrate contact region 19, 20 are formed. A cover film 21 is formed on a surface, a contact hole 22 reaching the metallic wiring layer 14 is formed in the cover film 21, the substrate contact region 19 and the substrate 10, and a contact hole 23 is formed similarly on the substrate contact region 20 side. A contact hole 24 reaching the source region 17 is shaped to the cover film 21, and a metallic layer 26 is formed on a surface. Accordingly, the allowable power supply current can be ensured sufficiently.

Inventors

• 👤 Naoto Yamada
• 👤 直人 山田

Bibliographic Details