Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form a via hole finer than the opening of a mask by changing a working gas and continuously conducting first and second high-frequency etching by using the same device. CONSTITUTION:A via lower hole 5, size of which is formed in accordance with an opening 4 and from which a wiring layer 1 is exposed, is formed to an inter-layer insulating film 2 on the wiring layer 1 through anisotropic etching by using a mask 3, and the mask 3 is removed. The upper side face of the lower hole 5 is removed in an inclination, in which an upper opening is widened, through first high-frequency etching using the mixed gas of argon and oxygen as a working gas while an insulator 6 deposited on the lower side face of the lower hole 5 and also formed on a base is shaped. A device conducting first RF etching is employed continuously, and the insulator 6 on the base of the lower hole 5 is removed through second RF etching using Ar as a working gas. According to said process, a desired via hole 7, a lower opening 7a of which is smaller than the opening 4 of the mask 3, an upper side face of which is tilted and an upper opening 7b of which is larger than the opening 4, is formed.

Inventors

• 👤 Takatoshi Hirota
• 👤 高敏 廣田

Bibliographic Details