Field-effect transistor and manufacture thereof

Abstract

Abstract PURPOSE:To improve especially gate-drain breakdown strength by providing a surface level reducing layer for reducing a localized level which exists on a region between a gate electrode and a drain electrode on an substrate surface. CONSTITUTION:As a factor determining gate breakdown strength of a field effect transistor is a GaAs surface state between a source and a drain rather than impurity concentration of a substrate 1, a surface level reducing layer 7 is provided for reducing a localized level existing on a region between at least a gate electrode 3 and a drain electrode on the surface of the substrate 1. That is, the surface level reducing layer 7 is formed with the GaAs substrate 1 surface between the gate electrode 3 and a ohmic electrode 6 sulfidized. Thus it is possible to reduce re-coupling of carriers and an energy barrier between the gate electrode 3 and the drain electrode, resulting in a field effect transistor with high gate breakdown strength obtained.

Inventors

• 👤 Yasutaka Kono
• 👤 河野　康孝

Bibliographic Details