semiconductor light emitting device

Abstract

Abstract PURPOSE:To obtain a semiconductor light-emitting element whose light-emitting efficiency is good by a method wherein a substrate crystal is formed of ZnO and the composition of an epitaxial layer is specified. CONSTITUTION:A substrate 1 is composed of n-type ZnO; an active layer and a clad layer are formed of AlxGa1-xN1-yAsy-based mixed crystals (where 0<=x<=1 and 0<y<1). That is to say, ZnO is used for the substrate crystal, and, in the composition of an epitaxial layer, one part of N in semiconductors GaN and AlN is replaced with As. They are lattice-matched with the ZnO for the substrate crystal. As a result, a good epitaxial layer by a GaNAs-based mixed crystal or an AlGaNAs-based mixed crystal can be obtained. Thereby, a semiconductor light-emitting element whose light-emitting efficiency is excellent is constituted.

Inventors

• 👤 Hiroyuki Ota
• 👤 啓之 太田
• 👤 Atsushi Watanabe
• 👤 温 渡辺

Bibliographic Details