Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To enhance reliability and to enhance driving capacity by forming an oxide film before a gate oxide film is formed, and anisotropically etching it. CONSTITUTION:An insulating film 102 is formed on a board 101. Then, a polycrystalline silicon film 103 is formed. Thereafter, the film 103 is etched in various shape. An insulting film 104 is formed. The film 104 is then removed. A sidewall 105 is formed at the end of the film 103. The surface of the film 103 is flattened. Then, a gate oxide film 112 is formed. A polycrystalline silicon film 113 is formed thereon. The film 113 is etched in various shape as a gate electrode. A source region 106 and a drain region 107 are formed, and impurity is implanted to reduce the resistance of the electrode 113. An insulating film 109 is formed, a contact hole 110 is formed, and wirings 111 are formed.

Inventors

• 👤 Shoichi Kimura
• 👤 木村　正一

Bibliographic Details