Filling method by bias ecr-cvd method

Abstract

Abstract PURPOSE:To form a great amount of deposit film on a recessed part with a large aspect ratio and prevent film thickness deviation by executing the bias ECR-CVD method for filling the recessed part under a condition where etching speed/deposit speed ratio is large. CONSTITUTION:First, as a ground film 2, a thin diamond film is formed on a substrate 1 having a trench or a recessed part 10a providing trench isolation. Next, the recessed part 10a is filled with filling material such as SiN under conditions where the ratio indicated by an etching speed/deposit speed is large. Since the sputtering rate of the film 2 is smaller than that of the filling material 3 in the process, the film 2 becomes a protective film at the shoulder of the recessed part 10, and without etching silicon and in the less side-deposit state, the recessed part 10 is filled. Deposit 31 Ls generated only on the surface near a flat surface because of the angle dependency of the deposit speed and etching speed at that time. Then, the material 3 is etched back and the film 2 is removed and flat isolation filling is obtained. This method enables filling without generating any film thickness deviation.

Inventors

• 👤 Tetsuo Gocho
• 👤 牛腸　哲雄

Bibliographic Details