Semiconductor device

Abstract

Abstract PURPOSE:To increase the dielectric strength of a capacitor and form a low- resistance capacitor electrode of polycrystalline silicon converted from amolphous silicon. CONSTITUTION:An NMOS transistor having a source 9, a drain 4, a gate electrode 2 and an oxide film 3 is formed on a p-type substrate. A thick-film field oxide 11 is formed on the substrate, and a wiring is provided on the field oxide. further, a contact hole 12 is formed in the oxide film 3 over the drain 4. Then, an amorphous silicon film 5a connected to the drain 4 is formed and doped with phosphorus by ion implantation. The amorphous silicon film 5a is converted to a polycrystalline silicon film 5b. The polycrystalline silicon film 5b is patterned to form a storage electrode 5 of polycrystalline silicon. Then, a silicon nitride film 6, an oxide film 7 and an opposed electrode 8 are formed sequentially.

Inventors

• 👤 Makoto Akizuki
• 👤 誠 秋月
• 👤 Hideki Mizuhara
• 👤 秀樹 水原
• 👤 Kunio Takeuchi
• 👤 邦生 竹内
• 👤 Shinji Furuichi
• 👤 古市　愼治
• 👤 Hiroyuki Aoe
• 👤 青江　弘行

Bibliographic Details