Dry etching device

Abstract

Abstract PURPOSE:To obtain high-density plasma under a vacuum of 10<-1> to 10<-3>Torr or thereabouts without making the size of a vacuum system change and without adding complicated and expensive facilities by a method wherein a hollow electrode system for feeding etching gas in the space in the interior of a vacuum chamber is installed on a parallel-plate high-frequency electrode system and the discharges of both electrode systems are superposed on each other. CONSTITUTION:A high-frequency electrode 31, the inner side of which consists of a perforated plate, and an earth electrode 32, which is used in combination as a supporting body for a substrate 2 to be etched, are made to oppose in parallel to each other in a vacuum chamber 1 and an opening is provided in the center of the electrode 31. A hollow electrode (a cathode) 7 is insulated by a cylindrical electrode (an anode) 8 surrounding this electrode 7 and an insulator 91 and the electrodes 8 and 31 are insulated from each other by an insulator 92. The electrode 7 is insulated from the wall of the chamber 1 by an insulator 93, is coupled with a gas introducing tube 4 to penetrate the wall of the chamber 1 and is connected to the negative pole of a DC power supply 81. In such a way, the electrode 7 is used as an anode, the earthed electrode 8 is used as an anode and discharge 11 which is generated by a DC voltage is generated between these electrode 7 and 8. Moreover CF4 gas is fed through the tube 4 as gas 41, He gas for carrier use and the like is fed through a gas introducing tube 42 as gas 43 and the electrode 31 and 32 are controlled independently of each other.

Inventors

• 👤 Kazumi Maruyama
• 👤 和美 丸山

Bibliographic Details