Compound semiconductor device

Abstract

Abstract PURPOSE:To suppress a leakage current of an electrode and to enhance an electric characteristic by a method wherein a layer of a high-resistivity material is inserted between an active layer inside a mesa structure and the electrode which is formed so as to cover a sidewall stepped part of the mesa structure. CONSTITUTION:An active layer 3 and a surface layer 4 are formed on a substrate 1; an etching operation is executed; a layer 6 of a high-resistivity material is formed on a sidewall part of this mesa 5. A channel 10 is formed on the surface of the active layer 3; an electrode 7 such as a gate electrode or the like is formed so as to transverse a stepped part of the mesa. The active layer 3 is composed mainly of InGaAs, contains n-type InAlAs functioning as an electron supply layer so as to be adjacent and constitutes a HEMT. Since the sidewall of the mesa 5 is covered with the layer 6 of the high-resistivity material, the active layer 3 does not come into direct contact with the electrode 7 which has been formed on the mesa. Consequently, a leakage current at the stepped sidewall part of the mesa can be suppressed largely and a characteristic of a device can be enhanced.

Inventors

• 👤 Teruhiko Kataue
• 👤 片上　輝彦
• 👤 Shigeru Kuroda
• 👤 黒田　滋

Bibliographic Details