Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To enhance the gm of GaAs MESFET further gaining sufficient drain breakdown strength by a method wherein the length of low carrier concentration active region on the drain electrode side in an LDD structure is specified to be longer than that on the source electrode side. CONSTITUTION:The title semiconductor device is provided with the first to fifth active regions 102-104, 106, 107 on a GaAs semiconductor substrate 101, a gate electrode 5, a source electrode 109, a drain electrode 110 on the substrate 101, a dielectric film 108 coating the gate electrode 105, the substrate surface from the gate electrode 105 to the source electrode 109 likewise from the gate electrode 105 to the drain electrode 110. On the other hand, the first region 102 beneath the gate electrode 105; the second region 103 is in contact with the first region 102 on the source electrode 109 side; the third region 104 longer than the region 103 is in contact with the first region 102 on the drain electrode 110 side; the fourth region 106 is in contact with the second region 103 on the source electrode 109 side; while the fifth region 107 is in contact with the third region 104 on the drain electrode 110 side.

Inventors

• 👤 Hideki Yakida
• 👤 八木田　秀樹
• 👤 Shutaro Nanbu
• 👤 修太郎 南部
• 👤 Koji Watanabe
• 👤 渡辺　厚司
• 👤 Toshiharu Tanpo
• 👤 反保　敏治
• 👤 Tadayoshi Nakatsuka
• 👤 忠良 中塚

Bibliographic Details