Bipolar semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To improve the collector cut-off frequency of bipolar transistor by a method wherein the first conductivity type the second semiconductor gnawing into the base part of the second semiconductor region to be a base from the first conductivity type the first semiconductor layer to be a collector are formed beneath the ends of a masking material to make an emitter opening. CONSTITUTION:The title bipolar semiconductor device is provided with the first conductivity type the first semiconductor layer 104 to be a collector; the second conductivity type the second semiconductor region 110 to be a base formed on the first semiconductor layer 104; the first conductivity type the third semiconductor regions 120A, 120B formed as if gnawing into the base part of the second semiconductor region 110 from the first semiconductor layer 104 in the shape of narrowing the base width B beneath the ends of a masking material 112; and the first conductivity type the fourth semiconductor region 132 to be an emitter formed in the second semiconductor region 110. For example, the said semiconductor regions 120A, 120B are formed yb selectively oblique ion-implanting phosphorus in high energy gradient through the emitter opening.

Inventors

• 👤 Shuichi Kameyama
• 👤 亀山　周一
• 👤 Hiroshi Shimomura
• 👤 浩 下村
• 👤 Kazuya Kikuchi
• 👤 菊池　和也

Bibliographic Details