Semiconductor device

Abstract

Abstract PURPOSE:To eliminate a difference in level on the surface and to deal with a case where a dielectric strength is required by a method wherein an isolation region used to insulate and isolate adjacent elements is formed of two isolation regions. CONSTITUTION:An isolation region used to insulate and isolate adjacent elements is constituted of the following: a first isolation region which has been formed by filling an insulating material into a groove 2 formed on the surface of a semiconductor substrate in such a way that the upper face of the material is nearly on the same face as the surface of the semiconductor substrate 1; and a second isolation region composed of a thick insulating oxide film 7 which has oxidized selectively the surface of the semiconductor substrate 1. Thereby, the elements are flattened by the first isolation region, a characteristic of the elements is improved, and a high density and a high integration are realized. In addition, a dielectric strength property between the elements can be enhanced by using the second isolation region.

Inventors

• 👤 Kazutaka Ikeyama
• 👤 池山　一孝

Bibliographic Details