Manufacture of semiconductor substrate

Abstract

Abstract PURPOSE:To make a thickness of an Si layer uniform and to enhance a production yield by a method wherein a process which substantially uses a 111 plane as a treatment face is provided when the surface of a wafer is treated by an anisotropic etching operation after two Si wafers one of which uses the 111 plane as a main face and which are composed of single-crystal Si have been pasted and after a thickness of the wafers has been reduced by a machining operation. CONSTITUTION:Two Si wafers 1, 2 at least one of which uses a 111 plane as a main face and which are composed of single-crystal Si are bonded via an oxide film 3; a thickness (d) of the Si wafer of the 111 plane is reduced by a treatment method including a machining means; after that, the surface of the wafer whose thickness (d) has been reduced is treated by an anisotropic etching operation which depends on a crystal orientation. During this process, it is arranged to include a process which uses the 111 plane as a treatment face. Thereby, a thickness of an element formation layer 1' can be made uniform, and a production yield of an SOI-type integrated circuit substrate is enhanced sharply.

Inventors

• 👤 Motomori Miyajima
• 👤 基守 宮嶋

Bibliographic Details