Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent lateral diffusions of source-drain and to suppress elongation of source.drain depleted layers by forming a gate electrode of a P-channel MOS type transistor, and then ion implanting nitrogen or oxygen to the sidewalls of the source.drain of the transistor. CONSTITUTION:After a gate insulating film 2 is formed on a semiconductor substrate 1 made of silicon or the like, a gate electrode 3 is formed. Then, nitrogen(N) or oxygen(O) is ion implanted. With the electrode 3 as a mask it is ion implanted. Accordingly, the N or O is not ion implanted to a channel directly under the electrode 3. Then, with the electrode 3 as a mask P-type impurity is implanted to a silicon substrate 1 to form source and drain 6, 7. Further, source.drain layers are diffused by the following heat treatment, but the source.drain layers are not considerably extended near the N or O ion implanted layer. Thus, a structure having a high resistance layer 4 containing high N or O concentration is formed near the layers of the P-type impurity source and drains 6, 7.

Inventors

• 👤 Takashi Hosaka
• 👤 俊 保坂

Bibliographic Details