Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To prevent the rise-up phenomenon of tungsten even if buffered fluoric acid is used and to obtain an excellent contact characteristic by forming a wiring which is insoluble to fluoric acid on a titanium silicide wiring, depositing an insulating film on the entire surface, and opening a contact hole in the insulating film. CONSTITUTION:Titanium silicide 3 is deposited on the entire surface of a silicon substrate 1 by, e.g. a sputtering method. Tungsten silicide 4 ia deposited on the titanium silicide 3 continuously by a sputtering method in the same vacuum state. The silicide is patterned in the required wiring pattern. Thereafter, e.g. a silicon oxide film is deposited by a CVD method as an insulating film 5 on the entire surface. A contact hole 6 is opened in the titanium silicide 3. Thereafter, e.g. liquid of NH4F:HF=50:1 is used as buffered fluoric acid. Dip etching is performed for 10 seconds. Thus the natural oxide film on the surface of the tungsten silicide 4 is removed. Thereafter, e.g. mixed gas containing silane and tungsten hexafluoride is used, and tungsten 7 is formed only in the contact hole 6 by a selective CVD method.

Inventors

• 👤 Toyokazu Fujii
• 👤 藤居　豊和
• 👤 Hiroshi Yamamoto
• 👤 浩 山本

Bibliographic Details