Semiconductor memory

Abstract

Abstract PURPOSE:To prevent the dendritic electrodes from breaking off not to do damage to any other memory cells by a method wherein the title semiconductor memory is provided with specific dendritic stacked capacitors. CONSTITUTION:The title semiconductor memory is provided with a multitude of accumulating electrodes 151-153 extending over in dendritic form, electrically connected to charge accumulating capacitor contact regions such as a source region 5 or drain regions 61, 62, etc., in transfer transistors. At this time, the dendritic stacked capacitors are composed of the multitude of accumulating electrodes 151-153 extending over in dendritic, sidewalls 22 comprising a conductive material electrically and mechanically connecting to the side periphery of the electrodes 151-153, dielectric films 24 and counter electrodes 25 formed on the electrodes 151-153 and the sidewalls 22. Through these procedures, the dendritic accumulating electrodes 151-153 are hardly broken off and even if they are broken off, will not do damage to any other memory cells.

Inventors

• 👤 Hiroshi Goto
• 👤 寛 後藤

Bibliographic Details