Vapor growth equipment

Abstract

Abstract PURPOSE:To increase the uniformity of temperature at the time of growth by bringing a buffer plate into close contact with the rear of a susceptor in the peripheral part, and making them face each other in the central part, via a buffer layer being a space formed by a recessed part. CONSTITUTION:A susceptor 4 mounting a wafer 2 has a space in the inside; therein a heater 6 for resistance heating is arranged; a buffer plate 8 is fixed on the rear of the susceptor 4; a recessed part is formed in the central part of the buffer plate 8, and turns to a buffer layer 10 to restrain thermal conduction. That is, there is the recessed part in the central part of the buffer plate 8; a space is formed between the central rear of the susceptor 4 and the buffer plate 8; the space turns to a buffer layer 10 to cut off thermal conduction. Although heat is transmitted to the buffer layer 10 by radiation, the heat quantity is small as compared with thermal conduction. Hence the excessive heat supply to the central part of the susceptor 4 is restrained. On the contrary, sufficient quantity of heat is supplied to the peripheral part of the susceptor 4 by thermal conduction. Thereby thin film vapor growth wherein film thickness and electric characteristics are uniform in the interior is enabled.

Inventors

• 👤 Kiyoshi Kubota
• 👤 清 久保田
• 👤 Kimito Nishikawa
• 👤 公人 西川

Bibliographic Details