Plasma etching device

Abstract

Abstract PURPOSE:To prevent a particle, etc., which is etched once from being adhered to the surface of a semiconductor substrate again by making the flow of gas to be in parallel with the surface of the semiconductor substrate and by performing etching within a laminar flow state environment. CONSTITUTION:A high frequency is applied to a lower electrode 12 and an upper electrode 11 is grounded. For example, Ar gas is allowed to flow in a laminar flow state from a gas discharge port 14 and is discharged from a discharge port 15. At this time, various kinds of settings should be made so that the area between the upper electrode 11 and the lower electrode 12 and the environment are in a laminar flow state and Ar is in plasma state between the electrodes, where the flow of gas is in parallel to the surface of a semiconductor substrate. Particles on the surface of the semiconductor which is subjected to plasma etching in this state scatter. But since the area between the gas discharge port 14 and the discharge port 15 is in the laminar flow state, the scattered particles float between the laminar flow layers due to layer flow and are discharged along with Ar gas by the discharge port 15.

Inventors

• 👤 Masao Miura
• 👤 正男 三浦

Bibliographic Details