Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To approximately double an effective capacitor area by forming a sidewall, connecting a first storage electrode and an electrode connecting section with a second storage electrode, and forming a second plate electrode through a dielectric on the second storage electrode. CONSTITUTION:A first storage electrode 51 and an electrode connecting region 46 are electrically connected through a polysilicon 54 after a sidewall 53 is formed; therefore, the first storage electrode 51 is not so badly damaged by etching as to affect conductivity. The first storage electrode 51 and the polysilicon 54 which becomes a second storage electrode are patterned simultaneously to complete an entire of a storage electrode 55. A second nitride film 56 is deposited which becomes a dielectric of a cell capacitor by low-pressure CVD method; then, polysilicon is deposited and phosphorus is diffused to form a second plate electrode 57. A first plate electrode 49 and the second plate electrode 57 are processed to form a structure to hold a storage electrode between them. The capacitance is approximately doubled in this way.

Inventors

• 👤 Tetsuro Yanai
• 👤 矢内　鉄朗

Bibliographic Details