Thin film semiconductor device and its manufacturing method

Abstract

Abstract PURPOSE:To activate impurity without generating the exfoliation of a poly-Si film, form a TFT of small leak current, and extremely reduce the defect of a display, by activating first introduced low concentration impurity by heat treatment at about 600 deg.C, and activating second introduced high concentration impurity by using laser. CONSTITUTION:A base SiO2 film 2 is deposited on a glass substrate 1 whose strain temperature is about 640 deg.C; P-type poly-Si films 3-5 are deposited; by heat treatment at 600 deg.C for 5 hours, the poly-Si films 3-5 are recrystallized, and impurity in the films are activated; a gate insulating film 6 is deposited; an I-layer poly-Si film for a gate electrode 7 is deposited; after the gate electrode is patterned, P is introduced; an SiO2 film 8 is deposited; by using XeCl laser, N-type impurity (P) is activated; after photoetching process, a transparent electrode (ITO) is sputtered; after photoetching process, liquid crystal is encapsulated between a polarizing plate and another glass substrate provided with a color filter, thereby completing a display.

Inventors

• 👤 Takashi Aoyama
• 👤 隆 青山
• 👤 Genshirou Kawachi
• 👤 玄士朗 河内
• 👤 Kenji Miyata
• 👤 健治 宮田
• 👤 Yasuhiro Mochizuki
• 👤 康弘 望月

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