Semiconductor light emitting device

Abstract

Abstract PURPOSE:To improve current distribution in a light emitting part composed of InGaAlP, and enhance light-leading-out efficiency and luminance, by selectively forming a specified intermediate energy gap layer of first conductivity type between a first conductivity type InGaAlP layer of the light emitting part and a substrate. CONSTITUTION:A compound semiconductor substrate 11 of first conductivity type, at least a first conductivity type InGaAIP layer 13 and a second conductivity type InGaAlP layer 15 which form a PN junction on the substrate II are laminated, thereby forming a light emitting part 22. A semiconductor light emitting device is provided with the above light emitting part 22 and an electrode 17 for current constriction formed thereon. In said device, between the first conductivity type InGaAIP layer 13 of the light emitting part 22 and the substrate 11, a first conductivity type intermediate energy gap layer 12 is selectively formed, the energy gap of which layer is larger than the substrate 11 and smaller than the first conductivity type InCaAlP layer 13. In at least a part under the electrode 17, the first conductivity type InGaAlP layer 13 and the substrate 11 are directly brought into contact with each other. For example, the above intermediate energy gap layer 12 is an InGaP layer.

Inventors

• 👤 Masayuki Ishikawa
• 👤 正行 石川
• 👤 Shigeya Narizuka
• 👤 重弥 成塚
• 👤 Yukie Nishikawa
• 👤 幸江 西川
• 👤 Hideto Sugawara
• 👤 秀人 菅原

Bibliographic Details