Field-effect transistor and forming method thereof

Abstract

Abstract PURPOSE: To obtain an MOSFET whose mobility of carriers is improved, by a method wherein a substrate composed of first semiconductor material, an epitaxial channel layer composed of alloy of first and second semiconductor materials, an epitaxial layer composed of semiconductor material capable of oxidation, etc., are contained. CONSTITUTION: This MOSFET contains a substrate 1 composed of first single crystal semiconductor material, an epitaxial channel layer 2 which is arranged on the substrate 1 and composed of alloy of the first semiconductor material and the second semiconductor material, and makes a pseudo-form to which strain is applied, an epitaxial layer 3 which is arranged on the channel layer 2 and composed of semiconductor material capable of oxidation, and a gate oxide layer 4 which is arranged on the semiconductor layer 3 capable of oxidation and composed of an oxide of the semiconductor 3 capable of oxidation. For example, a substrate 1 composed of single crystal silicon, an epitaxial channel layer 2 which is composed of Gex Si1-x alloy and makes a pseudo-form to which strain is applied, an epitaxial layer 3 of silicon, and a gate oxide layer 4 composed of silicon dioxide are contained.

Inventors

• 👤 Paul M Solomon
• 👤 ポール・アイケル・ソロモン
• 👤 Steven L Wright
• 👤 ステイブン・ローレンズ・ライト

Bibliographic Details