Semiconductor device

Abstract

Abstract PURPOSE:To obtain an intermediate layer which is insulated electrically but which can conduct heat by a method wherein individual films laminated on a base plate are formed in a state that functions of electrical insulation between a semiconductor element and its base, of relaxation of stress, and of formation of a brazable face. CONSTITUTION:At least an insulating film 2 and a film 6 capable of being brazed well via stress-relaxing metal films 4, 5 are laminated on a container metal base plate 1; a semiconductor element 11 is brazed on the film 6 capable of being brazed well. That is to say, to films 4 to 6 which are provided individually with individual functions to insulate the semiconductor element 11 and the base plate 1, to absorb a thermal stress and an external stress due to a difference in a coefficient of thermal expansion between the semiconductor element 11 and the base plate 1 and to form a face capable of being brazed of the semiconductor element 11 are laminated between the semiconductor element 11 and the container metal base plate 1. Thereby, a thin intermediate layer which guarantees a good heat-conductive property can be formed; the degree of freedom to select a material is made high; the cost can be low.

Inventors

• 👤 Yasumasa Saito
• 👤 斉藤　安正
• 👤 Kazuo Matsuzaki
• 👤 松崎　一夫
• 👤 Akira Amano
• 👤 彰 天野

Bibliographic Details