Semiconductor laser

Abstract

Abstract PURPOSE:To acquire an SCH laser which can fully contain a carrier inside an active layer while allowing light leak from the active layer by providing a forbidden band width of at least a forbidden band width of each layer adjacent to both sides of the active layer and by providing an 0.03 to 0.2mum thick N-barrier and P-barrier. CONSTITUTION:A 0.08mum thick N-barrier 1 of Ga0.45Al0.35As of doner concentration of 1X10<18>cm<-3> and a 0.08mum thick P-barrier 2 of Ga0.45Al0.35As of an acceptor concentration of 1X10<18>cm<-3> a are provided to both sides of a 0.1mum thick active layer 11 of undoped GaAs. Thereafter, an N-clad of Ga0.8Al0.2As 12 and a Ga0.5Al0.5As 14 and a Ti/Pt/Au electrode 16 are laminated on an N-layer 1 in specified donner concentration and thickness, and Ga0.8Al0.2As 15 and Ga0.5Al0.5As 15 and an Au/Zn electrode 17 are laminated on the P-barrier layer 2 in specified acceptor concentration and thickness. Selecting freedom of a forbidden band width of outside clad layers 12 to 15 is increased due to formation of thin N and P-type barriers of large forbidden band width. Furthermore, a laser device which allows light to spread easily to the outside clad layer can be acquired while containing a carrier inside the active layer completely.

Inventors

• 👤 Masumi Takeshima
• 👤 竹島　眞澄

Bibliographic Details