Semiconductor device

Abstract

Abstract PURPOSE:To enlarge the area of a memory cell part and the areas of bonding pads and to improve the connection strength of the bonding pads by a method wherein the bonding pads are formed on an device. CONSTITUTION:An insulating film 3 consisting of SiO2 or the like is formed on a gate electrode 2 constituting a MOSFET of a semiconductor chip 1, on which a multitude of elements are integrated and formed. Electrodes 6, to which bonding pads are connected, are formed on the film 3 on the periphery of the chip simultaneously with the formation of Al wirings 5, which are respectively connected to diffused layers 4 of the FET, on the film 3. A second layer insulating film 7 consisting of SiO2 or the like is formed and contact holes 8 are formed in the part only of the electrode 6 by photoetching. The bonding pads 9 are formed by a sputtering method. As the surfaces of the bonding pads are provided within a memory cell region, the areas of the bonding pads can be excluded from the area of the chip. Thereby, the miniaturization of a wiring pattern can be prevented by enlarging the area of the memory cell part and the sufficient bonding connection strength of the bonding pads is obtained.

Inventors

• 👤 Mitsuhiro Aono
• 👤 光弘 青野
• 👤 Yuji Inoue
• 👤 井上　祐治

Bibliographic Details