Resin-sealed semiconductor device

Abstract

Abstract PURPOSE:To reduce sharply the number of occurrences of resin cracks by forming a polyimide resin film of a specified thickness both on the surface of a semiconductor element and on the reverse surface of an island part of a lead frame. CONSTITUTION:Polyimide resin having excellent adhesion both to sealing resin and a semiconductor element and to the sealing resin and a lead frame is used. It the adhesion is not excellent, peeling occurs on an interface due to a steam pressure, a stress is concentrated thereon and consequently a resin crack occurs. A polyimide resin film is formed by coating both the surface of the semiconductor element and the reverse surface of an island part of the lead frame. If the surface of the semiconductor element alone is coated, peeling occurs on the interface between the reverse surface of the island part and the sealing resin, the stress is concentrated thereon and consequently the resin crack occurs. If the surface of the island part alone is coated, the peeling occurs on the interface between the surface of the peeling semiconductor element and the sealing resin, the stress is concentrated thereon, the resin crack occurs, and thus a sufficient effect can not be obtained. As to the amount of coating, the film having a thickness 5 to 100mum is formed on the surface of the semiconductor element and the reverse surface of the island part of the lead frame. As materials for the polyimide resin, tetracarboxylic-di-anhydride and diamine are used.

Inventors

• 👤 Koji Mori
• 👤 森　恒治

Bibliographic Details