Silicon thin film and its manufacture

Abstract

Abstract PURPOSE:To manufacture a silicon thin film whose electric resistance is small and whose optical band gap is sufficiently large by a method wherein the thin film formed on a substrate mainly contains silicon atoms, a specific element and an impurity element and it contains crystal particles within a specific range. CONSTITUTION:A silicon thin film mainly contains silicon atoms, at least one element selected from a group of fluorine, chlorine, bromine and iodine and an impurity element. The regularity of the arrangement of atoms, i.e. the structure of the thin film, is largely characteristic, and microcrystal particles are mixed and dispersed in an amorphous layer. Especially, a hydrogen concentration (hydrogen content) is set within a range of 0 to 8 atomic %, preferably 2 to 5 atomis %; the content of micro-crystalline particles is set within a range of 80 to 100vol.%.

Inventors

• 👤 Kazunobu Tanaka
• 👤 田中　一宜
• 👤 Akihisa Matsuda
• 👤 彰久 松田
• 👤 Mitsuo Matsumura
• 👤 松村　光雄
• 👤 Hideo Yamamoto
• 👤 英雄 山本

Bibliographic Details