Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To increase the space on the storage electrode sides by a method wherein, after successively depositing and selectively etching the first polysilicon layer and the first insulating film on the surface of a P-type silicon substrate, the sidewalls comprising the second polysilicon layer to be connected to the first polysilicon layer are left by depositing the second polysilicon layer and RIE processed on the whole surface. CONSTITUTION:After depositing a gate oxide film 3 and the fist polysilicon film on the surface of a P-type silicon substrate 1, gate electrodes 4a-4c and the gate oxide film 3 are formed. Next, after depositing the second polysilicon film and a silicon nitride film on the whole surface, the first storage electrodes 8a, 8b and mask nitride films 16a, 16b are formed. Next, after depositing the second polysilicon film, the mask nitride films 16a, 16b are RIE processed to leave the second storage electrodes 9a, 9b to be the sidewalls of the mask nitride films 16a, 16b. Through these procedures, the capacity can be increased by the amount of the first storage electrodes 8a, 8b and the second storage electrodes 9a, 9b bulged on the sidewalls of the mask nitride films 16a, 16b.

Inventors

• 👤 Shuichi Enomoto
• 👤 秀一 榎本

Bibliographic Details