Mis type semiconductor device

Abstract

Abstract PURPOSE:To reduce the occurrence rate of gate breakdown in the way of production process by providing an nitriding silicon film on the upper part of a gate electrode. CONSTITUTION:A gate electrode 3 consisting of a polysilicon film where approximately 0.3mum phosphor is doped through a gate oxide film 2 which is approximately 200Angstrom is provided on a silicon substrate 1. Also, approximately 100Angstrom thermal oxide film 4 is provided on the silicon substrate 1, an approximately 250Angstrom thermal oxide film 5 is provided on the side surface of the gate electrode 3, and an approximately 250Angstrom nitriding silicon film 6 is provided on the upper surface of the gate electrode 3. Further, through these insulation films, a mask aluminum 7 which becomes a mask for impregnating ion is provided, thus increasing capacity between a mask aluminum 7 and the silicon substrate 1 independently and reducing capacity between the mask aluminum 7 and the gate electrode 3. Therefore, even if the gate insulation film 5 is made thin, it becomes possible to prevent gate breakdown in the way of production process from occurring easily.

Inventors

• 👤 Haruo Amano
• 👤 天野　陽夫

Bibliographic Details