Standardization of wafer surface inspection

Abstract

Abstract PURPOSE:To obtain a correlation capable of being put to practical use by suppressing the characteristic between inspection apparatuses and to enhance a standardization and the production yield of a semiconductor device by a method wherein a wafer, for correlation use, to which metal particles having a multiple-dispersion grainsize distribution have been applied is formed and it is measured by using a plurality of wafer surface inspection apparatuses to obtain the correlation. CONSTITUTION:In a first process 1, metal particles having a multiple-dispersion particle-size distribution are applied to a wafer and the wafer for correlation use is formed. In a second process 2, the grain-size distribution on the wafer for correlation use is measured by using a prescribed wafer surface inspection apparatus. In a third process 3, the particle-size distribution on the wafer for correlation use is measured by using another wafer surface inspection apparatus. In a fourth process 4, a correlation is found by using a measured value by the prescribed wafer surface inspection apparatus and a measured value by another wafer surface inspection apparatus. Thereby, since the metal particles of the multiple-dispersion particle-size distribution are applied to the wafer for correlation use, their optical characteristic approximates to that of dust particles in the manufacture of a semiconductor device, the correlation capable of being put to practical use can be found by suppressing the characteristic of the individual wafer surface inspection apparatus. As a result, it is possible to enhance the production yield of the semiconductor device.

Inventors

• 👤 Hirozane Komada
• 👤 駒田　寛実
• 👤 Tomoko Nakamura
• 👤 知子 中村

Bibliographic Details