Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To improve an yield and reliability by a method wherein a deposition process and a planarization process of a flattened insulating film are repeated. CONSTITUTION:A polysilicon interconnection 7 on a semiconductor substrate 1 is used as a substratum. A BPSG film 6a which cannot produce a gap and whose film thickness is, e.g. 0.5mum is deposited. Then, a heat treatment at 900 deg.C is executed in an atmosphere of, e.g. N2 for 20min. A flattened BPSG film 6a is obtained. A BPSG film 6c up to a sufficient film thickness as a layer insulating film is deposited up to a film thickness of, e.g. 0.6mum which cannot produce a gap. Then, a heat treatment is executed at 900 deg.C for 30 min in a steam atmosphere. The films 6c and 6b are made to flow. A flattened BPSG film 6d is obtained. Thereby, the flattened good layer insulating film without a gap is obtained; it is possible to realize that an yield is enhanced and that reliability is enhanced.

Inventors

• 👤 Akemichi Yonekura
• 👤 米倉　明道

Bibliographic Details