Method of marking

Abstract

Abstract PURPOSE:To facilitate marking and removal of deposit by making a groove composing an identification pattern in the specified region in a wafer and chemically corroding a section including the specified region in the direction of the depth of the groove. CONSTITUTION:The surface of a GaAs wafer of 3 inches in diameter is processed by mirror finish, the rear thereof is finished by etching after lapping, and the surface is marked. A YAG laser is used as a laser and beams are applied and scanned to the face of the wafer 1 for marking. After the marking, the surface of the wafer is removed by a thickness of 45mum by etching and mirror finish. In this case, in spite of removal of the surface having an about 5mum deep groove by a thickness of 45mum, the groove advances in the direction of the depth and is kept as deep as in the marking and widened only a little because of chemical polishing in the etching and mirror finish and no trouble such as unclear marking is caused.

Inventors

• 👤 Mikio Kashiwa
• 👤 幹雄 柏
• 👤 Hiroki Akiyama
• 👤 弘樹 秋山
• 👤 Yukio Sasaki
• 👤 幸男 佐々木
• 👤 Naoyuki Kawai
• 👤 直行 河合

Bibliographic Details