semiconductor light emitting device

Abstract

Abstract PURPOSE:To reduce the wave length of oscillation wave without lowering light emitting efficiency by forming an active layer with a specific distortion super lattice structure. CONSTITUTION:A GaIn P well layer 8 having a lattice constant smaller than a GaAs substrate 2 is provided on an active layer so that the composition x may be larger than GaXInX-1P (x=0.51) which has a lattice constant equivalent to GaAs. This construction increases a band gap and reduces the oscillation wave length and turns it into short wave. Furthermore, there is no Al solid phase composition, which will not lower the light emitting efficiency. A barrier layer 10 having lattice constant larger than GaAs is formed on the active layer 6 with the GaIn P well layer delta and distortion lattice multilayer structure so that the average lattice constant equivalent to the lattice constant of GaAs may be provided to the entire active layer. It is, therefore, possible to prevent the generated of misfit dislocation induced by lattice mismatching and protect the crystallizability.

Inventors

• 👤 Masato Kondo
• 👤 真人 近藤

Bibliographic Details