Semiconductor device

Abstract

Abstract PURPOSE:To realize further greater capacity without expanding the occupied area of a memory capacitor in plan view by forming more thickly an insulating film below an adjacent word line. CONSTITUTION:A silicon oxide film 4 is deposited on one principal surface of a semiconductor substrate 1, which film 4 is then patterned into the shape of an adjacent word line 5b where a stacked capacitor can be extended and formed, by a photolithography technique and an etching technique. Accordingly, the silicon oxide film 4 is thickly formed under the word line 5b when the stacked capacitor is extended and formed. Hereby, the memory capacitor has a greater area corresponding to a thickened fraction of the silicon oxide film 4 even though the area of the memory capacitor viewed from the flat plane thereof is not expanded, to increase the capacity thereof.

Inventors

• 👤 Mariko Itou
• 👤 伊藤　麻理子

Bibliographic Details