Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To flatten the interlayer insulating film during multilayer wiring formation uniformly however wide the space of wiring may be by precipitating a silicon oxide film from in silica supersaturated solution and accumulating it only on an insulating film so as to fill the space between desired patterns of metal wiring. CONSTITUTION:The wiring of desired metal patterns is formed on an insulating film 13, which has a desired wiring connection hole, and a silicon oxide film 16 is precipitated from in silica saturated solution and is accumulated only on the insulating film 13 so as to fill the space between the desired patterns of the metal wiring 14. Since the silicon oxide film 16 is precipitated and accumulated selectively only on the interlayer insulating film 13 free of wiring patterns so as to fill the space between patterns, the interlayer insulating film can be flattened uniformly whether the space between wirings is wide or narrow.

Inventors

• 👤 Katsuhiko Hieda
• 👤 克彦 稗田

Bibliographic Details