Method of forming gate electrode

Abstract

Abstract PURPOSE:To prevent dislocation between the base part of a T-shaped gate electrode and the eaves part by forming the T-shaped gate electrode with exposure of one time. CONSTITUTION:A resist film 2 and a polyimide film 3 arc formed in piles on a substrate 1, and then a gate electrode pattern 4 is formed on the polyimide film 3. Next, after forming a metallic film 5 on the whole face, the gate electrode pattern 4 and the metallic film on it are removed, and with the remaining metallic film 5 as a mask, the polyimide film 3 and the resist film 2 are etched so as to expose the surface of the substrate 1 and form an opening 6. Furthermore, after enlarging only the opening of the polyimide film 3 by etching, the metallic film 5 is removed so as to form a gate metallic film 7 on the whole face, and then the resist film 2 and the polyimide film 3 are removed so as to form a T-shaped gate electrode 8. That is, based on the position of the gate electrode pattern 4, both parties of the base part 9 and the eaves part 9' of the gate electrode 8 are formed. Hereby, the dislocation between the base part 9 and the eaves part 9' of the T-shaped gate electrode 8 can be removed.

Inventors

• 👤 Hisaaki Tominaga
• 👤 富永　久昭

Bibliographic Details