Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To obtain a silicon-on-insulator(SIO) substrate which is made of single crystallized silicon layer and has a good crystallinity by converting a polycrystalline silicon layer of large crystal gains converted by heat-treatment into a single crystalline silicon layer by irradiating the polycrystalline silicon layer with an energetic beam. CONSTITUTION:When an amorphous silicon layer or an amorphous silicon layer containing silicon crystals is formed on an substrate having an insulating layer on the surface and the layer is heat-treated, the layer is converted to a polycrystalline silicon layer of large crystal grains. When the layer is irradiated with an energetic beam, the polycrystalline silicon layer of large crystal grains is more excellently converted into a single crystalline layer than a polycrystalline silicon layer of small crystal grains which disturb excellent single crystallization. As a result, an SOI substrate for semiconductor which is made of a single crystallized silicon layer and has a good crystallinity is produced in a short time.

Inventors

• 👤 Takae Sasaki
• 👤 佐々木　孝江
• 👤 Junichi Iizuka
• 👤 飯塚　潤一
• 👤 Fumitake Mieno
• 👤 文健 三重野

Bibliographic Details