Semiconductor device

Abstract

Abstract PURPOSE:To elevate the drift speed of carriers over the whole area of a channel so as to enable high-speed operation by forming a source region out of semiconductor substance which has forbidden band width broader than that of semiconductor substance which forms a channel region. CONSTITUTION:A P-well region 2 and an N-well region 3 are formed within a silicon substrate 1, and high concentration of N-type GaAs films 8 to become the source region and the drain region of an N-channel transistor are formed on the P-well region 2. High concentration of P-type GaAs films 12 to become the source region and the drain region of a P-channel transistor are formed on the N-well region 3. And the forbidden band width of GaAs to form the source region is broader than silicon to form the channel region. Accordingly, discontinuous band structure, high in energy potential, on the source region side is formed on the hetero interface between the source region and the channel region. Hereby, the drift speed of carriers is elevated over the whole area of the channel, and high-speed operation can be done.

Inventors

• 👤 Shinichi Takagi
• 👤 信一 高木

Bibliographic Details