Vapor growth apparatus for iii-v compound semiconductor crystal

Abstract

Abstract PURPOSE:To control the thickness and the composition of an epitaxial layer at the specified values with good reproducibility by adding a path which can keep the amount of supply of a group III raw material constant to an apparatus. CONSTITUTION:In a vapor growth apparatus, a path is provided between a flow control for a group III raw material gas and a reaction chamber. The path includes an amplifier and an analyzer and it provides feedback control to maintain a constant flow of the material gas. Namely, in the path between the flow control 8 and the reaction chamber 7, the amplifier 15 and the mass analyzer 16 operate to feed back the result of the gas analysis to the flow control 8. Therefore, the gas which is sent into the reaction chamber is sampled at any time by the operation of a valve, and the composition is analyzed. The result can be fed back immediately to the flow control for the group III raw material gas. Thus, the amount of supply of the group III raw material gas is kept always constant without fluctuating. The thickness and the composition of a grown crystal layer can be controlled at the specified values with good reproducibility.

Inventors

• 👤 Kenji Kunihara
• 👤 健二 国原

Bibliographic Details