Semiconductor optical amplifier

Abstract

Abstract PURPOSE:To provide low reflectivity at input and output end faces and to efficiently couple an input and an output to an exterior by employing as a semiconductor substrate in which various semiconductor layers are laminated, an oblique substrate having a substrate surface orientation inclined with respect to the crystal axis direction of the semiconductor substrate. CONSTITUTION:A GaAs oblique substrate 1 having a surface orientation 20 inclined at an angle theta from (x-axis) 21 of a plane orientation [100] to (y-axis) direction of a plane orientation [010] is provided. A first clad layer 17 of n-type AlGaAs, an optical waveguide 2 used also as an active layer of GaAs and a second clad layer 15 of a p-type AlGaAs are sequentially laminated on the substrate 1 by a MBE method. Thereafter, the layer 15 is formed in a ridge state by an etching process using a photolithography method, then insulating layers of SiNx are provided at both sides of the ridge, a cap layer 14 of a p<+> type AlGaAs is provided on the layer 15, and electrodes 12, 18 of Au are attached to the upper and lower surfaces.

Inventors

• 👤 Yuichi Handa
• 👤 祐一 半田

Bibliographic Details