Impurity introduction into semiconductor film

Abstract

Abstract PURPOSE:To form a PN junction of small leak current on a thin film type semiconductor film by a method wherein, after a mask is formed on a part of a region into which impurity is introduced, ion is implanted, annealing is performed, a mask is formed so as to enable the ion implantation only into the region where the above mask is formed, ion is implanted and annealing is performed. CONSTITUTION:In the case where impurity is introduced into a thin film type semiconductor film 2, impurity is introduced by ion implantation after a mask 5 is formed on a part of a region into which impurity is introduced, and annealing is performed. Next, after a mask 8 capable of ion implantation only into the region, where the above mask 5 is formed, is arranged on the surface of the semiconductor 2, ion is implanted and annealing is performed. For example, a gate oxide film 4 and a gate electrode 3 are formed on a P<->-doped silicon thin film 2; a resist 5 is formed thereon, and phosphorus ions are implanted; then the resist 5 is eliminated and annealing is performed at 600 deg.C. Next, a resist 8 is formed and phosphorus ions are implanted; after the resist 8 is eliminated, annealing is performed, thereby forming a recrystallization region 7 being a source and drain region of single crystal.

Inventors

• 👤 Hiromitsu Namita
• 👤 博光 波田

Bibliographic Details