Vapor growth device

Abstract

Abstract PURPOSE:To improve uniformity of the film width and resistivity distribution inside the semiconductor wafer by rotating a cylindrical heater heating the semiconductor wafer housed inside a reaction container. CONSTITUTION:Semiconductor wafers 1 laminated in a large number in a holder 2 inside a reaction container 3 are rotated by a motor 9, further, a cylindrical heater 5, whose temperature is raised with induction heating by a high-frequency coil 6, is made to rotate in the inverse direction to the holder 2 by a motor 7 for rotation. As a result, the semiconductor wafer 1 is uniformly induction- heated so that he film thickness and a resistivity distribution inside the semiconductor wafer 1 can be uniformly improved.

Inventors

• 👤 Hironori Inoue
• 👤 洋典 井上
• 👤 Yasuhiro Mochizuki
• 👤 康弘 望月
• 👤 Mikio Akiyama
• 👤 秋山　幹夫

Bibliographic Details