Method for forming thin film

Abstract

Abstract PURPOSE:To enable improvement in crystallinity of a formed thin film by preforming a buffer layer consisting of a substance having a lattice constant different from that of a semiconductor before normal growth of the thin film in forming the thin film of the above-mentioned substance by a hetero.epitaxial growth method. CONSTITUTION:A thin film 3 of a substance (e.g., SiC) having a lattice constant different from that of a semiconductor constituting a semiconductor substrate 1 (e.g., Si substrate) is formed on the surface of the substrate 1 by a hetero.epitaxial growth method. In the process, the following constitution is adopted. That is steps for feeding only a hydrocarbon gas by dilution with hydrogen and carbonizing the surface and thinly growing a substance having the lattice constant different from that of the semiconductor constituting the substrate 1 are repeated plural times to form an SiC buffer layer 2 consisting of the substance having the lattice constant different from that of the semiconductor constituting the substrate 1. The substance having the lattice constant different from that of the semiconductor constituting the substrate 1 is then normally grown.

Inventors

• 👤 Masao Yamada
• 👤 雅雄 山田
• 👤 Masafumi Nakaishi
• 👤 中石　雅文
• 👤 Yoshitaka Kitamura
• 👤 北村　芳隆

Bibliographic Details