Method for forming thin film

Abstract

Abstract PURPOSE:To enable improvement in crystallinity of a formed thin film by intermittently carrying out growth operation of the abovementioned thin film in forming the thin film of a substance having a lattice constant different from that of a semiconductor constituting a substrate on the surface of a semiconductor substrate by a hetero.epitaxial growth method. CONSTITUTION:Thin films 2 and 3 of a substance (e.g., SiC) having a lattice constant different from that of a semiconductor constituting a semiconductor substrate 1 (e.g., Si substrate) are formed on the surface of the substrate 1 by a hetero.epitaxial growth method. In the process, the following constitution is adopted. That is the substance 2 having the lattice constant different from that of the semiconductor constituting the substrate 1 is grown to a prescribed thickness and the growth is then once stopped. A step for growing the substance 3 having the lattice constant different from that of the semiconductor constituting the substrate 1 to a prescribed thickness is further repeated once or plural times.

Inventors

• 👤 Masao Yamada
• 👤 雅雄 山田

Bibliographic Details