Method and apparatus for removing organic conpound film

Abstract

Abstract PURPOSE:To remove an organic compound film rapidly and without fail by a method wherein an active specie containing halogen element as well as a gas containing steam or hydrogen element are led into a reaction chamber containing a processed body whereon the organic compound film is formed. CONSTITUTION:A gate electrode 23 is formed by RIE (reactive ion etching) process of a polycrystalline silicon film, etc., formed on a semiconductor substrate 21 through the intermediary of a gate insulating film 22 using a photoresist 24 to be an organic compound film as a mask. This body 2 to be processed contained in a reactive chamber 1 is fed with NF3 gas from the first pipe 4 while the gas is excited in a discharge tube 6 to lead fluorine F radical produced by the excitation to the chamber 1. Finally, the reaction chamber 1 is fed with hydrogen gas bubbled in a vessel 9 through the second pipe 8.

Inventors

• 👤 Nobuo Hayasaka
• 👤 伸夫 早坂
• 👤 Tsunetoshi Arikado
• 👤 経敏 有門
• 👤 Keiji Horioka
• 👤 啓治 堀岡
• 👤 Haruo Okano
• 👤 晴雄 岡野

Bibliographic Details