Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To flatten an interlayer insulating film by sticking a heat-softening film as the interlayer insulating film on the surface of a semiconductor substrate, softening the film by heating, and sweeping the surface thereof by injection of inert gas. CONSTITUTION:A silicon oxide film 2 is formed on a silicon substrate 1, polycrystalline silicon films 3a, 3b and 3c of the desired patterns are formed thereon, and a PSG film 4 as an interlayer insulating film is laminated thereon by atmospheric CVD method. The silicon substrate 1 is fixed on a rotation plate and the plate is rotated in a nitrogen atmosphere at about 1,000 deg.C in a clean oven, and at the same time high temperature nitrogen gas is jetted on the upper surface of the silicon substrate 1 through an injection nozzle to sweep the surface of the interlayer insulating film 4. The insulating film 4 softens, the surface thereof is made uniform by the rotation force of the plate and the flow of pressurized nitrogen gas, the steps are lowered, and the difference in height of the surface is reduced. This enables fine processing and manufacturing high-density and highly integrated semiconductor devices.

Inventors

• 👤 Norihiro Nakajima
• 👤 中嶋　教博

Bibliographic Details