Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To improve crystalline properties of a silicon which acts as an active layer on the second layer and render characteristics of a transistor favorable by forming the second layer, active region on an MgO-Al2O3 film which has crystalline properties and acts as an insulating film, thereby irradiating laser beams. CONSTITUTION:Using AlCl3, MgCl2, CO2, H2 as reaction gases, a MgO-Al2O3 film 10 grows on an insulating film 9. Annealing is performed by irradiating an Al2O3 film 10 with laser beams. A silicon layer 11 which acts as an active layer on the second layer is formed. Then, the silicon layer 11 is crystallized by irradiating the laser beams. The silicon layer 11 is left only on a region where transistors are formed and the other regions of its layer are removed by etching. A gate oxide film 12, a gate electrode 13, a source and drain diffusion layer 14 are formed one after another to form transistors at the active layer on the second layer. This approach improves crystalline properties of the silicon layer and thus renders characteristics of the transistors favorable.

Inventors

• 👤 Masafumi Shishino
• 👤 宍野　政文

Bibliographic Details