Lateral transistor

Abstract

Abstract PURPOSE:To prevent a leakage current by providing a reverse conductivity type impurity layer in contact with the lower side of a base region around the periphery of a region for forming one conductivity type emitter and collector, and providing one conductivity type impurity layer between the impurity layer and a buried layer to form a blocking diode. CONSTITUTION:A p<+> type impurity layer 8 is provided between an n-type impurity layer 7 in contact with the lower side of a base region 3 formed on an epitaxial region 4 and a buried layer 5 provided thereunder. A parasitic transistor is not formed by providing the layer 8, but a blocking diode D made of the region 4, the n-type region of a buried layer 2 and the layer 8 is formed. Thus, iB by a power source E3 is blocked by the diode D to eliminate the flow of a leakage current to a p-type semiconductor substrate 9.

Inventors

• 👤 Masaki Miyahara
• 👤 雅樹 宮原

Bibliographic Details