Thin film resistor and manufacture thereof

Abstract

Abstract PURPOSE:To trim a resistance value by a simple and inexpensive method of annealing by forming a thin film resistor using a thin film of tungsten nitride. CONSTITUTION:An insulating film (SiO2 film) 2 is formed on a semiconductor substrate 1 made of Si, GaAs, etc., and a thin film resistor 3 made of a thin film of tungsten nitride (WN) is placed thereon. The resistor 3 is connected at its both ends with electrode wirings 4, and covered with a protective film 5 together with the wirings 4 to be protected. Nitride silicide (SiN) is employed as the film 5. The resistance value of the resistor 3 is trimmed by annealing. Thus, a simple and inexpensive trimming can be performed.

Inventors

• 👤 Yuko Sekino
• 👤 祐子 関野

Bibliographic Details